tpsmb6.8 thru tpsmb43a vishay general semiconductor document number: 88406 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 surface mount par ? transient voltage suppressors high temperature st ability and high relia bility conditions typical applications use in sensitive electronics protection against voltage transients induced by indu ctive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automo tive requirement ? available in uni-directional polarity only ? 600 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: do-214aa (smb) molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs comp liant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure (3) mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum primary characteristics v br 6.8 v to 43 v p ppm 600 w i fsm 75 a t j max. 185 c do-214aa (smb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 600 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a peak forward surge current 8.3 ms single half sine-wave (2)(3) i fsm 75 a instantaneous forward voltage at 50 a (3) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
tpsmb6.8 thru tpsmb43a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88406 revision: 09-feb-11 2 notes (1) v br measured after i t applied for 300 s, i t = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consis tent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device device marking code breakdown voltage v br (1) at i t (v) test current i t (ma) stand- off voltage v wm (v) maximum reverse leakage at v wm i d (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping vol tag e at i ppm v c (v) min. max. tpsmb6.8 kdp 6.12 7.48 10 5.50 500 1000 55.6 10.8 tpsmb6.8a kep 6.45 7.14 10 5.80 500 1000 57.1 10.5 tpsmb7.5 kfp 6.75 8.25 10 6.05 250 500 51.3 11.7 tpsmb7.5a kgp 7.13 7.88 10 6.40 250 500 53.1 11.3 tpsmb8.2 khp 7.38 9.02 10 6.63 100 200 48.0 12.5 tpsmb8.2a kkp 7.79 8.61 10 7.02 100 200 49.6 12.1 tpsmb9.1 klp 8.19 10.0 1.0 7.37 25.0 50.0 43.5 13.8 tpsmb9.1a kmp 8.65 9.55 1.0 7.78 25.0 50.0 44.8 13.4 tpsmb10 knp 9.00 11.0 1.0 8.10 5.0 20.0 40.0 15.0 tpsmb10a kpp 9.50 10.5 1.0 8.55 5.0 20.0 41.4 14.5 tpsmb11 kqp 9.90 12.1 1.0 8.92 2.0 5.0 37.0 16.2 tpsmb11a krp 10.5 11.6 1.0 9.40 2.0 5.0 38.5 15.6 tpsmb12 ksp 10.8 13.2 1.0 9.72 2.0 5.0 34.7 17.3 tpsmb12a ktp 11.4 12.6 1.0 10.2 2.0 5.0 35.9 16.7 tpsmb13 kup 11.7 14.3 1.0 10.5 2.0 5.0 31.6 19.0 tpsmb13a kvp 12.4 13.7 1.0 11.1 2.0 5.0 33.0 18.2 tpsmb15 kwp 13.5 16.5 1.0 12.1 1.0 5.0 27.3 22.0 tpsmb15a kxp 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2 tpsmb16 kyp 14.4 17.6 1.0 12.9 1.0 5.0 25.5 23.5 tpsmb16a kzp 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5 tpsmb18 ldp 16.2 19.8 1.0 14.5 1.0 5.0 22.6 26.5 tpsmb18a lep 17.1 18.9 1.0 15.3 1.0 5.0 23.8 25.2 tpsmb20 lfp 18.0 22.0 1.0 16.2 1.0 5.0 20.6 29.1 tpsmb20a lgp 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 tpsmb22 lhp 19.8 24.2 1.0 17.8 1.0 5.0 18.8 31.9 tpsmb22a lkp 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6 tpsmb24 llp 21.6 26.4 1.0 19.4 1.0 5.0 17.3 34.7 tpsmb24a lmp 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2 tpsmb27 lnp 24.3 29.7 1.0 21.8 1.0 5.0 15.3 39.1 tpsmb27a lpp 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5 TPSMB30 lqp 27.0 33.0 1.0 24.3 1.0 5.0 13.8 43.5 TPSMB30a lrp 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4 tpsmb33 lsp 29.7 36.3 1.0 26.8 1.0 5.0 12.6 47.7 tpsmb33a ltp 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7 tpsmb36 lup 32.4 39.6 1.0 29.1 1.0 5.0 11.5 52.0 tpsmb36a lvp 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9 tpsmb39 lwp 35.1 42.9 1.0 31.6 1.0 5.0 10.6 56.4 tpsmb39a lxp 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9 tpsmb43 lyp 38.7 47.3 1.0 34.8 1.0 5.0 9.70 61.9 tpsmb43a lzp 40.9 45.2 1.0 36.8 1.0 5.0 10.1 59.3
tpsmb6.8 thru tpsmb43a vishay general semiconductor document number: 88406 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode tpsmb6.8ahe3/52t (1) 0.096 52t 750 7" diameter plastic tape and reel tpsmb6.8ahe3/5bt (1) 0.096 5bt 3200 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1.0 10 100 n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0 50 100 100 75 50 25 0 150 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 1 10 100 junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p v r meas u red at zero bias v r meas u red at stand-off v oltage, v w m v br - breakdo w n v oltage ( v )
tpsmb6.8 thru tpsmb43a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88406 revision: 09-feb-11 4 package outline dimensions in inches (millimeters) figure 5. maximum non-repetitive peak forward surge current 100 10 10 1 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e 0.160 (4.06) 0.1 8 0 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.00 8 (0.2) 0.130 (3.30) 0.155 (3.94) 0.0 8 4 (2.13) 0.096 (2.44) 0.077 (1.95) 0.0 8 6 (2.20) cathode band do-214aa (smb) 0.0 8 5 (2.159) max. 0.220 ref. 0.0 8 6 (2.1 8 ) mi n . 0.060 (1.52) mi n . mountin g pad layout
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